Introduction
As semiconductor technologies advance, IGBT (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs are increasingly being adopted in critical applications such as electronic instrumentation, industrial power supplies, renewable energy systems, data centers, and distributed power circuits.
To support the demand for reliable and isolated power in gate-driving applications, MEAN WELL has introduced the GD2 Series—a compact, high-isolation 2W DC-DC converter specially designed for driving IGBT and SiC MOSFETs that require dual isolated power rails.
Unlike traditional designs that rely on internal transformer taps for gate drive power, the GD2 Series simplifies circuit layouts and enhances system safety and reliability. It delivers 4.2KVac / 6KVdc isolation, eliminates the need for additional heat sinks, improves voltage stability, and reduces PCB complexity—making it a superior alternative for demanding applications. The primary differences between these two driving approaches are detailed in the following table:
Key Features
- SIP7 package with standard international single-row pinout
- Compact size: 19.5 x 9.8 x 12.5 mm
- High isolation: 4.2KVac / 6KVdc between input and output
- Operating temperature: -40°C to +90°C, natural convection cooled
- No external heat sink required
- Short circuit protection (continuous operation without damage)
- Safety certified: UL / EAC / CE / UKCA
- Backed by a 3-year warranty
Application
Product Information
Whether you're designing for high-voltage switching, precision control, or harsh environments, the GD2 Series offers an ideal, compact solution for safely powering gate driver circuits in modern industrial systems.
If you are interested, please feel free to contact us at contact@wellforces.co.nz.
